By J. J. Liou, A. Ortiz-Conde, F. Garcia-Sanchez (auth.)
Analysis and layout of MOSFETs: Modeling, Simulation, and ParameterExtraction is the 1st publication committed solely to a extensive spectrum of research and layout matters regarding the semiconductor gadget referred to as metal-oxide semiconductor field-effect transistor (MOSFET). those concerns contain MOSFET machine physics, modeling, numerical simulation, and parameter extraction. The dialogue of the appliance of equipment simulation to the extraction of MOSFET parameters, comparable to the brink voltage, potent channel lengths, and sequence resistances, is of specific curiosity to all readers and offers a priceless studying and reference device for college students, researchers and engineers.
Analysis and layout of MOSFETs: Modeling, Simulation, and ParameterExtraction, widely referenced, and containing greater than a hundred and eighty illustrations, is an cutting edge and indispensable new publication on MOSFETs layout technology.
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Extra resources for Analysis and Design of Mosfets: Modeling, Simulation and Parameter Extraction
Clearly, the vertical current is much smaller than the lateral current, a condition validating the quasiequilibrium approximation in the long-channel MOSFET under study. 2 Surface potential We now begin our detailed analysis of the vertical energy band diagram, shown in Fig. 13, for the long-channel MOSFET. The one-dimensional analysis will be used because the GCA is valid in the vertical direction. We will also use the quasi-equilibrium approximation; that is, E Fp and EFn. , x direction). , y direction).
The one-dimensional analysis will be used because the GCA is valid in the vertical direction. We will also use the quasi-equilibrium approximation; that is, E Fp and EFn. , x direction). , y direction). The electrostatic potential
04 ... 1 V I I I I I I At the surface (x=O) 1020 '? , y direction). 1 V ~ ... ... 4 VGS = 3 V I I I I I I I I - ... 4 () 'C () Q) w Q) - ... 19 : Lateral and vertical electric field versus the lateral distance. The two impulses are the large electric fields at the drain and source metallurgical junctions. 35 CHAPTER 1. MOSFET PHYSICS AND MODELING ........ 5 E ......... 0 f/) c -........ 1 V ,... 20 : Lateral and vertical drain current densities versus the lateral distance. 37) q where 4>(x = 0) ;: -4>s is the surface potential, and 4>(x = 00) ;: 4>8 is the bulk potential.
Analysis and Design of Mosfets: Modeling, Simulation and Parameter Extraction by J. J. Liou, A. Ortiz-Conde, F. Garcia-Sanchez (auth.)